Photoluminescence from SiGe NPs: SiO_2 Thin Films Co-doped with Al

Photoluminescence from SiGe NPs: SiO_2 Thin Films Co-doped with Al

Different doses of Al atoms were implanted into SiGe-rich SiO2 thin films, and the impacts of the doping dose and the annealing temperature on the photoluminescence (PL) from these thin films were investigated. Al-doping promoted the nucleation of SiGe nanoparticles (NPs). The addition of Al enhanced the PL intensity owing to an increase in the number of nucleation sites. However, the Al impurity generated a deep recombination level in the band gap of the SiGe NPs. When the Al-doping dose was 6 X 10^(14) cm^(−2), the intensity of the PL reached a maximum.

Different doses of Al atoms were implanted into SiGe-rich SiO2 thin films, and the impacts of the doping dose and the annealing temperature on the photoluminescence (PL) from these thin films were investigated. Al-doping promoted the nucleation of SiGe nanoparticles (NPs). The addition of Al enhanced the PL intensity owing to an increase in the number of nucleation sites. However, the Al impurity generated a deep recombination level in the band gap of the SiGe NPs. When the Al-doping dose was 6 X 10^(14) cm^(−2), the intensity of the PL reached a maximum.