Mole Fraction Effect on the Interband Transition Energy of CdTe/CdxZn1−xTe Nanostructures

Mole Fraction Effect on the Interband Transition Energy of CdTe/CdxZn1−xTe Nanostructures

The electrical properties of strained CdTe quantum dots (QDs) grown on a CdTe/CdxZn1−xTe substrate layer were studied using an eight-band strain-dependent k·p Hamiltonian and the theory of linear elasticity. The combined effect of the Cd mole fraction of the CdxZn1−xTe substrate and the wetting layer thickness is found to have an influence on the energies of the conduction and the valence subbands. We find that at the wetting layer thickness used in the PL spectra, the calculated interband transition energy shows a reasonable agreement with the experiment data when a pyramidally shaped nanostructure is assumed.

The electrical properties of strained CdTe quantum dots (QDs) grown on a CdTe/CdxZn1−xTe substrate layer were studied using an eight-band strain-dependent k·p Hamiltonian and the theory of linear elasticity. The combined effect of the Cd mole fraction of the CdxZn1−xTe substrate and the wetting layer thickness is found to have an influence on the energies of the conduction and the valence subbands. We find that at the wetting layer thickness used in the PL spectra, the calculated interband transition energy shows a reasonable agreement with the experiment data when a pyramidally shaped nanostructure is assumed.