The Temperature Dependence of the Quantum Transition Properties of the Quasi-two-dimensional System in Quasi-two-dimensional Semiconductors

The Temperature Dependence of the Quantum Transition Properties of the Quasi-two-dimensional System in Quasi-two-dimensional Semiconductors

Abstract-We investigated theoretically the temperature dependence of the quantum optical transition of quasi-2-dimensional Landau splitting, in GaN and GaAs. We apply the quantum transport theory (QTR) to a system of electrons confined in a potential. We use the projected Liouville equation method with equilibrium average projection scheme (EAPS). Through the analysis of this work, we found increasing optical quantum transition line shapes (QTLSs) and the quantum transition line widths (QTLWs) in GaN and GaAs with increasing temperature. We also found the temperature dependences of the scattering factor functions: γ(T) of GaN < γ(T) of GaAs in the temperature region 50 K < T and γ(T) of GaAs < γ(T) of GaN in the temperature T < 50 K and λ = 394 µm.

Abstract-We investigated theoretically the temperature dependence of the quantum optical transition of quasi-2-dimensional Landau splitting, in GaN and GaAs. We apply the quantum transport theory (QTR) to a system of electrons confined in a potential. We use the projected Liouville equation method with equilibrium average projection scheme (EAPS). Through the analysis of this work, we found increasing optical quantum transition line shapes (QTLSs) and the quantum transition line widths (QTLWs) in GaN and GaAs with increasing temperature. We also found the temperature dependences of the scattering factor functions: γ(T) of GaN < γ(T) of GaAs in the temperature region 50 K < T and γ(T) of GaAs < γ(T) of GaN in the temperature T < 50 K and λ = 394 µm.