Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition

Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition

HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD)with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH3)2]4} as a Hf precursor and a N2 plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250℃ The optimized process temperature, plasma power, and pressure were 250 ℃,300 W, and 1 Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700 ℃ for 10 min. HfN films deposited on contact holes (0.12-µm wide and 1.8-µm deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures,and the formation of a copper silicide phase was observed after annealing at 650 ℃.

HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD)with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH3)2]4} as a Hf precursor and a N2 plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250℃ The optimized process temperature, plasma power, and pressure were 250 ℃,300 W, and 1 Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700 ℃ for 10 min. HfN films deposited on contact holes (0.12-µm wide and 1.8-µm deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures,and the formation of a copper silicide phase was observed after annealing at 650 ℃.