Internal Efficiency of Staggered InGaN/InGaN Quantum-Well Light-Emitting Diodes

Internal Efficiency of Staggered InGaN/InGaN Quantum-Well Light-Emitting Diodes

The internal efficiency of staggered 440-nm InGaN/InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs) is investigated using the multiband effective mass theory. These results are compared with those for conventional 440-nm InGaN/GaN QW structures. The internal efficiency is shown to be increased significantly by the inclusion of the staggered layer. This is mainly due to the fact that the radiative recombination rate is largely enhanced due to a reduction in the internal field. The peak shift due to the screening electric field for a staggered QW structure is relatively smaller than that for a conventional QW structure.

The internal efficiency of staggered 440-nm InGaN/InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs) is investigated using the multiband effective mass theory. These results are compared with those for conventional 440-nm InGaN/GaN QW structures. The internal efficiency is shown to be increased significantly by the inclusion of the staggered layer. This is mainly due to the fact that the radiative recombination rate is largely enhanced due to a reduction in the internal field. The peak shift due to the screening electric field for a staggered QW structure is relatively smaller than that for a conventional QW structure.