Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.

Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 ≤ x ≤ 0.93. This result is conrmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.