Diluted Ferromagnetic Semiconductor in a Cr-Based MnTe Thin Film

Diluted Ferromagnetic Semiconductor in a Cr-Based MnTe Thin Film

Mn1-xCrxTe (x = 0.05, 0.1, 0.15), a single phase of high crystalline quality, was successfully grown on a Si(100):B substrate by using molecular beam epitaxy (MBE). An investigation on the magnetic and the electric transport properties of the Mn1-xCrxTe (x = 0.05, 0.1, 0.15) films shows ferromagnetic properties unlike antiferromagnetic bulk MnTe materials. The temperature dependence of the magnetic susceptibility in the film with x = 0.10 exhibits a sharp ferromagnetic transitions at around 175 K. An obvious semiconducting behavior is shown in the temperature range from 20 K up to 300 K. Our X-ray results and magnetization data have verified the ferromagnetism for preparing Cr-cluster-free magnetic semiconductor thin films as candidate materials for potential spintronic applications.

Mn1-xCrxTe (x = 0.05, 0.1, 0.15), a single phase of high crystalline quality, was successfully grown on a Si(100):B substrate by using molecular beam epitaxy (MBE). An investigation on the magnetic and the electric transport properties of the Mn1-xCrxTe (x = 0.05, 0.1, 0.15) films shows ferromagnetic properties unlike antiferromagnetic bulk MnTe materials. The temperature dependence of the magnetic susceptibility in the film with x = 0.10 exhibits a sharp ferromagnetic transitions at around 175 K. An obvious semiconducting behavior is shown in the temperature range from 20 K up to 300 K. Our X-ray results and magnetization data have verified the ferromagnetism for preparing Cr-cluster-free magnetic semiconductor thin films as candidate materials for potential spintronic applications.