Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma

Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma

In this study, BST thin lms were etched with inductively coupled CF4/(Cl2+Ar) plasmas. The etch characteristics of BST thin lms as a function of CF4/(Cl2+Ar) gas mixtures were analyzed by using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin lms was 53.6 nm/min, because a small addition of CF4 to the Cl2/Ar mixture increased the chemical eect. The prole of the etched BST lm is over 70 , but the etch residue is not found at the sidewall. The optimum condition appears to be a 10 % CF4/(Cl2 + Ar) gas mixture in the present work.

In this study, BST thin lms were etched with inductively coupled CF4/(Cl2+Ar) plasmas. The etch characteristics of BST thin lms as a function of CF4/(Cl2+Ar) gas mixtures were analyzed by using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin lms was 53.6 nm/min, because a small addition of CF4 to the Cl2/Ar mixture increased the chemical eect. The prole of the etched BST lm is over 70 , but the etch residue is not found at the sidewall. The optimum condition appears to be a 10 % CF4/(Cl2 + Ar) gas mixture in the present work.