Growth of crystalline boron nanowires by pulsed laser ablation
Growth of crystalline boron nanowires by pulsed laser ablation
- 세라믹연구소
- Journal of Ceramic Processing Research
- 12(2)
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2011.04199 - 201 (3 pages)
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DOI : http://dx.doi.org/10.36410/jcpr.2011.12.2.199
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Crystalline boron nanowires were grown on Pt coated sapphire substrates using pulsed laser ablation at different temperatures under a pressure of 50 Pa. High-resolution TEM and transmission electron diffraction (TED) analyses were performed to determine the crystal structure of these nanowires. These nanowires had diameters ~100 nm and lengths in the micrometer range. Systematic analyses showed that a vapour-liquid-solid (VLS) mechanism plays an important role in the growth of boron nanowires. The role of the Pt catalyst in the synthesis of boron nanowires is also discussed.
Crystalline boron nanowires were grown on Pt coated sapphire substrates using pulsed laser ablation at different temperatures under a pressure of 50 Pa. High-resolution TEM and transmission electron diffraction (TED) analyses were performed to determine the crystal structure of these nanowires. These nanowires had diameters ~100 nm and lengths in the micrometer range. Systematic analyses showed that a vapour-liquid-solid (VLS) mechanism plays an important role in the growth of boron nanowires. The role of the Pt catalyst in the synthesis of boron nanowires is also discussed.
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