Structural and optical characterization of Ru2Si3 layers on Si formed by a two-step channeled ion implantation

Structural and optical characterization of Ru2Si3 layers on Si formed by a two-step channeled ion implantation

Structural and optical properties have been investigated for Ru2Si3 layers on Si (100) formed by two-step channeled ion implantations (70 keV, 6.92 × 1016/㎠ and 40 keV, 4.31 × 1016/㎠) and subsequent annealing at 1150℃ for 120 second. Rutherford backscattering/ ion channeling (RBS/C) analyses have revealed that the Ru2Si3 layers were grown on the Si substrate but with a rather poor crystalline quality. The optical spectra have been obtained by spectroscopic ellipsometry (SE) and optical absorption measurements. From the optical investigations, the real and imaginary parts of the dielectric function as well as the absorption coefficient have been derived. The spectra of Ru2Si3 layers exhibit a semi-conducting character with an allowed direct band gap of 0.843 eV.

Structural and optical properties have been investigated for Ru2Si3 layers on Si (100) formed by two-step channeled ion implantations (70 keV, 6.92 × 1016/㎠ and 40 keV, 4.31 × 1016/㎠) and subsequent annealing at 1150℃ for 120 second. Rutherford backscattering/ ion channeling (RBS/C) analyses have revealed that the Ru2Si3 layers were grown on the Si substrate but with a rather poor crystalline quality. The optical spectra have been obtained by spectroscopic ellipsometry (SE) and optical absorption measurements. From the optical investigations, the real and imaginary parts of the dielectric function as well as the absorption coefficient have been derived. The spectra of Ru2Si3 layers exhibit a semi-conducting character with an allowed direct band gap of 0.843 eV.