Colloidal nano-abrasives and slurry for chemical-mechanical polishing of semiconductor materials
Colloidal nano-abrasives and slurry for chemical-mechanical polishing of semiconductor materials
- 세라믹연구소
- Journal of Ceramic Processing Research
- 8(1)
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2007.0252 - 55 (4 pages)
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DOI : http://dx.doi.org/10.36410/jcpr.2007.8.1.52
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Chemical-mechanical polishing or planarization (CMP) is one of the key fabrication processes in the semiconductor industry. Colloidal nano-abrasives with different particle sizes are required for slurries in different CMP processes of semiconductor. So the controlled-growth of particle sizes, particle size distribution and their application become more and more important. In this paper, based on additional experiments and analysis, colloidal nano-abrasives with different particle sizes were prepared by ion-exchange and hydrothermal processes, and their size and stability were characterized by transmission electron microscope (TEM) and a Zeta potential instrument. Results show that colloidal nano-abrasives with diameters of 10-20 nm, 50-70 nm, 80-90 nm were obtained, and the zeta potential (less than −45 mV) also illustrates that the colloidal nano-abrasives was of high stability. One kind of colloidal nano-abrasives with average diameter of 80-90 nm was used to prepare one polishing slurry for silicon wafers. The polishing rate was more than 600 nm/minute and the root mean square (RMS) of surface roughness for polished silicon wafers was less than 0.4 nm, which shows that this type of slurry with the self-made colloidal abrasives not only gives higher polishing rate, but also provides less surface roughness.
Chemical-mechanical polishing or planarization (CMP) is one of the key fabrication processes in the semiconductor industry. Colloidal nano-abrasives with different particle sizes are required for slurries in different CMP processes of semiconductor. So the controlled-growth of particle sizes, particle size distribution and their application become more and more important. In this paper, based on additional experiments and analysis, colloidal nano-abrasives with different particle sizes were prepared by ion-exchange and hydrothermal processes, and their size and stability were characterized by transmission electron microscope (TEM) and a Zeta potential instrument. Results show that colloidal nano-abrasives with diameters of 10-20 nm, 50-70 nm, 80-90 nm were obtained, and the zeta potential (less than −45 mV) also illustrates that the colloidal nano-abrasives was of high stability. One kind of colloidal nano-abrasives with average diameter of 80-90 nm was used to prepare one polishing slurry for silicon wafers. The polishing rate was more than 600 nm/minute and the root mean square (RMS) of surface roughness for polished silicon wafers was less than 0.4 nm, which shows that this type of slurry with the self-made colloidal abrasives not only gives higher polishing rate, but also provides less surface roughness.
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