Electrical properties of the multilayered PZT/BaTiO₃/PZT thick films

Electrical properties of the multilayered PZT/BaTiO₃/PZT thick films

Multilayered PZT/BaTiO₃/PZT thick/thin/thick films were fabricated by two different methods-thick films of Pb₁.₁(Zr0.52Ti0.48)O₃ by a screen printing method on alumina substrate electrode with Pt, thin films of BaTiO₃by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO₃layer. We investigated the effect of phase, composition, and interfacial state of the BaTiO₃ thin film layers at the interface between the PZT thick films. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel-prepared BaTiO₃ layers at the interface of the PZT thick films. The insertion of the BaTiO₃ interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of the BaTiO₃ layers. These results suggested that there is coexistence of the PZT phase and the BaTiO₃ phase or the presence of a modified BaTiO₃ at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film is less that 1.5×10−9 A/cm2 at 5 V.

Multilayered PZT/BaTiO₃/PZT thick/thin/thick films were fabricated by two different methods-thick films of Pb₁.₁(Zr0.52Ti0.48)O₃ by a screen printing method on alumina substrate electrode with Pt, thin films of BaTiO₃by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO₃layer. We investigated the effect of phase, composition, and interfacial state of the BaTiO₃ thin film layers at the interface between the PZT thick films. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel-prepared BaTiO₃ layers at the interface of the PZT thick films. The insertion of the BaTiO₃ interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of the BaTiO₃ layers. These results suggested that there is coexistence of the PZT phase and the BaTiO₃ phase or the presence of a modified BaTiO₃ at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film is less that 1.5×10−9 A/cm2 at 5 V.