Field effect transistor properties of ZnO nanowires

Field effect transistor properties of ZnO nanowires

Zinc oxide (ZnO) nanostructures were grown on Si (001) substrates by thermal chemical vapor deposition without any catalysts. The deposition temperatures varied from 800 oC to 1100 oC. SEM and XRD data suggest the nanostructures are wellaligned, single ZnO crystals with a (0002) preferential orientation. Back-gate ZnO nanowire field effect transistors (FET) were also successfully fabricated using a photolithography process. The fabricated nanowire FET exhibited Ohmic contact between the ZnO nanowire channels and Au metal electrodes. The ZnO nanowire exhibited n-type field effect transistor behavior denoted by an increase in current with increasing gate voltage.

Zinc oxide (ZnO) nanostructures were grown on Si (001) substrates by thermal chemical vapor deposition without any catalysts. The deposition temperatures varied from 800 oC to 1100 oC. SEM and XRD data suggest the nanostructures are wellaligned, single ZnO crystals with a (0002) preferential orientation. Back-gate ZnO nanowire field effect transistors (FET) were also successfully fabricated using a photolithography process. The fabricated nanowire FET exhibited Ohmic contact between the ZnO nanowire channels and Au metal electrodes. The ZnO nanowire exhibited n-type field effect transistor behavior denoted by an increase in current with increasing gate voltage.