Investigation on the phonon behavior of MgB₂ films via polarized Raman spectra

Investigation on the phonon behavior of MgB₂ films via polarized Raman spectra

In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB₂ films on c-axis oriented Al₂O₃, examining its correlation with the critical temperature (T_c) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the T_c values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E_2g phonon mode plays a crucial role in the EPC mechanism, the determination of T_c values in MgB₂ involves not only electron-E_2g coupling but also contributions from other phonon modes.