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SCOPUS 학술저널

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

1. Introduction 2. Basic Factors That Change the Nucleation of Graphene 3. Tactics to Reduce the Nucleation Density 4. Addressing the Issue of Homogeneity 5. Outlook & Future Considerations 6. Conclusion References

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